• date_rangePosted On :   Feb 27' 2017
  • location_cityCity :   Foshan
  • languageCountry :   China
  • content_pasteEnquiry No. :   S-140497
  • library_booksCatalog :    Available Catalog

Toroidal transformer input could be provide with single ,double or triple
voltage winding,output can be provide from single to several
winding.The capacity from 20VA to 25000VA,With their high efficiency ,
smaller in size, lower in weight, less mechanical hum ,low exterior
magnetic field, low off load losses without size limit and single mounting
point ,our toroidal transformers are widely applied to audio
equipment,medical equipment,stage light ,medical equipment,etc

  • Contacts Details
  • person :
    Rita Liu
  • business :
    Foshan Ecko Electrotech Co.,Ltd
  • home :
    No. 3 Jiuding 6 Road, Jihua, Foshan, Guangdong
  • location_city :
    Foshan
  • location_on :
    N/A
  • language :
    China
  • call :
General Purpose Relay - BTA12

date_rangeOct 10' 2018 /  Taiwan

BREIF: relay has been a relay manufacturer over 40 years. relay has worked with world famous brand as their OEM/ ODM over 20 years. Our insistence on quality and service has earned beta relay a good reputation among our users and clients.

Special Relay - BT199

date_rangeOct 08' 2018 /  Taiwan

HIGHLIGHT: heavy duty relay upto 50 amp ) can replace the below relays: Omron relay: MGN Tyco relay: PRD Magnecraft relay: W199 Deltrol relay: 900 multiple choices on features, LED incidator, Din rail base, Magnet, Diode, clear cover wide choice of coil volts: 6V, 12V, 24V, 48V, 110V, 120V, 220V, 230V, 240V UL listed: E115915

SMD 1A 1000V General Purpose Rectifier Standard Diode M7 S1M 1N4007 GS1M

date_rangeSep 13' 2018 /  China

Place of Origin:Jiangsu, China (Mainland) Brand Name:MDD Model Number:M7 Type:Rectifier Diode Package Type:Surface Mount Max. Forward Voltage:1.1V Max. Reverse Voltage:1000V Max. Forward Current:1A Max. Reverse Current:5uA Certification:RoHS

CGHV96100F2 - 100-W

date_rangeJul 28' 2018 /  China

Wolfspeed’s CGHV96100F2 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) on silicon-carbide (SiC) substrates.