• date_rangePosted On :   Feb 14' 2011
  • location_cityCity :   Shenzhen
  • languageCountry :   China
  • content_pasteEnquiry No. :   S-84355
  • library_booksCatalog :    Available Catalog

Lepos combines its technologies to produces carbon film resistors with excellent quality and stable performance for customers. These carbon film resistors have low cost and wide resistance range, and can be used as high-resistance and high-voltage resistors. Because carbon film resistors are leaded resistors, suitable to manual installation and maintenance, and with the lowest prices among all kinds of leaded resistors, carbon film resistors are normally used in power sources and adapters.

  • Contacts Details
  • person :
    Ms. Joanna Xu
  • business :
    Lepos Electronics Co. , Ltd.
  • home :
    12g, Tower 4, Hongling Bldg. , Hongli
  • location_city :
    Shenzhen
  • location_on :
    Guangdong
  • language :
    China
  • call :
General Purpose Relay - BTA12

date_rangeOct 10' 2018 /  Taiwan

BREIF: relay has been a relay manufacturer over 40 years. relay has worked with world famous brand as their OEM/ ODM over 20 years. Our insistence on quality and service has earned beta relay a good reputation among our users and clients.

Special Relay - BT199

date_rangeOct 08' 2018 /  Taiwan

HIGHLIGHT: heavy duty relay upto 50 amp ) can replace the below relays: Omron relay: MGN Tyco relay: PRD Magnecraft relay: W199 Deltrol relay: 900 multiple choices on features, LED incidator, Din rail base, Magnet, Diode, clear cover wide choice of coil volts: 6V, 12V, 24V, 48V, 110V, 120V, 220V, 230V, 240V UL listed: E115915

SMD 1A 1000V General Purpose Rectifier Standard Diode M7 S1M 1N4007 GS1M

date_rangeSep 13' 2018 /  China

Place of Origin:Jiangsu, China (Mainland) Brand Name:MDD Model Number:M7 Type:Rectifier Diode Package Type:Surface Mount Max. Forward Voltage:1.1V Max. Reverse Voltage:1000V Max. Forward Current:1A Max. Reverse Current:5uA Certification:RoHS

CGHV96100F2 - 100-W

date_rangeJul 28' 2018 /  China

Wolfspeed’s CGHV96100F2 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) on silicon-carbide (SiC) substrates.