• date_rangePosted On :   Feb 14' 2011
  • location_cityCity :   Shenzhen
  • languageCountry :   China
  • content_pasteEnquiry No. :   S-84358
  • library_booksCatalog :    Available Catalog

A modern semiconductor diode is made of a crystal of semiconductor like silicon that has impurities added to it to create a region on one side that contains negative charge carriers, called n-type semiconductor, and a region on the other side that contains positive charge carriers, called p-type semiconductor. The diode's terminals are attached to each of these regions. The boundary within the crystal between these two regions, called a PN junction, is where the action of the diode takes place.

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    Ms. Joanna Xu
  • business :
    Lepos Electronics Co. , Ltd.
  • home :
    12g, Tower 4, Hongling Bldg. , Hongli
  • location_city :
    Shenzhen
  • location_on :
    Guangdong
  • language :
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General Purpose Relay - BTA12

date_rangeOct 10' 2018 /  Taiwan

BREIF: relay has been a relay manufacturer over 40 years. relay has worked with world famous brand as their OEM/ ODM over 20 years. Our insistence on quality and service has earned beta relay a good reputation among our users and clients.

Special Relay - BT199

date_rangeOct 08' 2018 /  Taiwan

HIGHLIGHT: heavy duty relay upto 50 amp ) can replace the below relays: Omron relay: MGN Tyco relay: PRD Magnecraft relay: W199 Deltrol relay: 900 multiple choices on features, LED incidator, Din rail base, Magnet, Diode, clear cover wide choice of coil volts: 6V, 12V, 24V, 48V, 110V, 120V, 220V, 230V, 240V UL listed: E115915

SMD 1A 1000V General Purpose Rectifier Standard Diode M7 S1M 1N4007 GS1M

date_rangeSep 13' 2018 /  China

Place of Origin:Jiangsu, China (Mainland) Brand Name:MDD Model Number:M7 Type:Rectifier Diode Package Type:Surface Mount Max. Forward Voltage:1.1V Max. Reverse Voltage:1000V Max. Forward Current:1A Max. Reverse Current:5uA Certification:RoHS

CGHV96100F2 - 100-W

date_rangeJul 28' 2018 /  China

Wolfspeed’s CGHV96100F2 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) on silicon-carbide (SiC) substrates.